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Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsASBECK, P. M; CHIEN-PING LEE; CHANG, M.-C. F et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1377-1380, issn 0018-9383Article

Correlation of threshold voltage of implanted field effect transistors and carbon in GaAs substratesCHEN, R. T; HOLMES, D. E; ASBECK, P. M et al.Applied physics letters. 1984, Vol 45, Num 4, pp 459-461, issn 0003-6951Article

Improvement of III-N surfaces after inductivity coupled plasma dry etch exposureKEOGH, D. M; DUPUIS, R. D; FENG, M et al.Proceedings - Electrochemical Society. 2005, pp 354-360, issn 0161-6374, isbn 1-56677-462-4, 7 p.Conference Paper

Bandgap engineering of GaInNP on GaAs(001) for electronic applicationsTU, C. W; HONG, Y. G; ANDRE, R et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 631-635, isbn 0-7803-8595-0, 1Vol, 5 p.Conference Paper

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Monolithically integrated HBT/MESFET circuitZAMPARDI, P. J; BECCUE, S. M; PEDROTTI, K. D et al.Electronics Letters. 1993, Vol 29, Num 12, pp 1100-1102, issn 0013-5194Article

AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off processCHANG, M.-C. F; ASBECK, P. M; WANG, K. C et al.IEEE electron device letters. 1987, Vol 8, Num 7, pp 303-305, issn 0741-3106Article

AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceCHANG, M. F; ASBECK, P. M; WANG, K. C et al.Electronics Letters. 1986, Vol 22, Num 22, pp 1173-1174, issn 0013-5194Article

Nonthreshold logic ring oscillators implemented with GaAs/(GaAl)As heterojunction bipolar transistorsASBECK, P. M; MILLER, D. L; ANDERSON, R. J et al.IEEE electron device letters. 1984, Vol 5, Num 5, pp 181-183, issn 0741-3106Article

Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurementWALDROP, J. R; WANG, K. C; ASBECK, P. M et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 5, pp 1248-1250, issn 0018-9383Article

300ps 4K read-only memory implemented with AlGaAs/GaAs HBT technologyKWOK, C. Y; SHENG, N. H; ASBECK, P. M et al.Electronics Letters. 1994, Vol 30, Num 10, pp 759-760, issn 0013-5194Article

Phase-noise behaviour of frequency dividers implemented with GaAs heterojunction bipolar transistorsAGARWAL, K. K; THOMPSON, W. J; ASBECK, P. M et al.Electronics Letters. 1985, Vol 21, Num 22, pp 1005-1006, issn 0013-5194Article

Accurate thermal analysis of GaN HFETsCONWAY, A. M; ASBECK, P. M; MOON, J. S et al.Solid-state electronics. 2008, Vol 52, Num 5, pp 637-643, issn 0038-1101, 7 p.Article

Electroabsorption multiple quantum well modulators for high frequency applicationsCHANG, W. S. C; LOI, K. K; LIAO, H. H et al.SPIE proceedings series. 1997, pp 142-156, isbn 0-8194-2729-2Conference Paper

Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applicationsCHANG, C. E; ASBECK, P. M; KEH-CHUNG WANG et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 4, pp 685-691, issn 0018-9383Article

InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped baseGEE, R. C; TSUNG-PEI CHIN; TU, C. W et al.IEEE electron device letters. 1992, Vol 13, Num 5, pp 247-249, issn 0741-3106Article

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Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHzWANG, N. L; SHENG, N. H; CHANG, M. F et al.IEEE transactions on microwave theory and techniques. 1990, Vol 38, Num 10, pp 1381-1390, issn 0018-9480, 10 p.Article

High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistorsENQUIST, P. M; HUTCHBY, J. A; CHANG, M. F et al.Electronics Letters. 1989, Vol 25, Num 17, pp 1124-1125, issn 0013-5194, 2 p.Article

High-speed (f_t=78 GHz) AllnAs/GalnAs single heterojunction HBTFARLEY, C. W; CHANG, M. F; ASBECK, P. M et al.Electronics Letters. 1989, Vol 25, Num 13, pp 846-847, issn 0013-5194, 2 p.Article

A 20-GHz frequency divider implemented with heterojunction bipolar transistorsWANG, K. C; ASBECK, P. M; CHANG, M. F et al.IEEE electron device letters. 1987, Vol 8, Num 9, pp 383-385, issn 0741-3106Article

GaAs/aAlAs heterojunction bipolar transistors using a self-aligned substitutional emitter processCHANG, M. F; ASBECK, P. M; MILLER, D. L et al.IEEE electron device letters. 1986, Vol 7, Num 1, pp 8-10, issn 0741-3106Article

Role of the piezoelectric effect in device uniformity of GaAs integrated circuitsCHANG, M. F; LEE, C. P; ASBECK, P. M et al.Applied physics letters. 1984, Vol 45, Num 3, pp 279-281, issn 0003-6951Article